Modeling of Redistribution of Infused Dopant in a Multilayer Structure Dopant Under Influence of Variation of Pressure of Vapor of the Dopant

E.L. Pankratov1, E.A. Bulaeva2, 1Nizhny Novgorod State University, Russia and 2Nizhny Novgorod State University of Architecture and Civil Engineering, Russia

ABSTRACT

In this paper we used an analytical approach to model nonlinear diffusion of dopant in a multilayer structure with account nonstationary annealing of the dopant. The approach do without crosslinking solutions at the interface between layers of the multilayer structure. In this paper we analyzed influence of pressure of vapor of infusing dopant during doping of multilayer structure on values of optimal parameters of technological process to manufacture p-n-junctions. It has been shown, that doping of multilayer structures by diffusion and optimization of annealing of dopant gives us possibility to increase sharpness of p-n-junctions (single p-n-junctions and p-n-junctions within transistors) and to increase homogeneity of dopant distribution in doped area.

KEYWORDS

Dopant diffusion; multilayer structure; p-n-heterojunctions; optimization of technological process; influence of pressure of vapor

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